Nickel germanide with rare earth interlayers for Ge CMOS applications

Author

Mishra, R.K. ; Ganguly, Utsav ; Ganguly, Shaumik ; Lodha, Saurabh ; Nainani, Aneesh ; Abraham, Matthew C.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol.(IIT), Mumbai, India

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

In this study we show that incorporation of rare earth metal interlayers such as Yb and Er between Ni and n-Ge can simultaneously enhance the stability of the germanide as well as lower the Schottky barrier (φ_b) at the germanide/n-Ge interface. As compared to nickel germanide, thermal stability improvement in the low resistance phase by nearly 150 °C and reduction in the electron Schottky barrier height by 0.13 eV was observed for germanides formed using Yb and Er interlayers. This work addresses key challenges in realizing low resistance contacts to n-Ge for future logic and memory applications.

Keywords

CMOS integrated circuits; erbium; germanium; nickel; thermal stability; ytterbium; CMOS applications; Er; Ge; Ni; Yb; electron Schottky barrier height reduction; logic applications; low resistance contacts; low resistance phase; memory applications; nickel germanide; rare earth interlayers; thermal stability improvement; Erbium; Germanium; Tiles; Fermi level pinning; Germanide; Rare earth metals; Schottky barrier; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628107

Filename

6628107