• DocumentCode
    3476004
  • Title

    Reliability of Strain-Si FPGA Product Fabricated by Novel Ultimate Spacer Process

  • Author

    Luo, Y.H. ; Nayak, D. ; Lee, J. ; Gitlin, D. ; Tsai, C.T.

  • Author_Institution
    Technol. Dev. Dept., Xilinx Inc., San Jose, CA
  • fYear
    2006
  • fDate
    Oct. 16 2006-Sept. 19 2006
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    Strain-Si field-programmable gate arrays (FPGA) is fabricated by using ultimate spacer process (USP) with a single capping stress liner. An overall 15% speed enhancement without compromising yield was obtained. The product reliability assessment, including HTOL, TCT, ESD (CDM and HBM) and latch-up, was performed simultaneously on USP and control parts. They show comparable product reliability and both pass product specs. Wafer level device reliability was also studied for NBTI, HCI and oxide TDDB. Wafer level NBTI is well correlated with product level HTOL degradation. It is confirmed that USP technology improves product performance significantly, and the product reliability is comparable to that of baseline technology
  • Keywords
    CMOS logic circuits; electric breakdown; field programmable gate arrays; integrated circuit reliability; silicon; ESD; HCI; HTOL; NBTI; TCT; field-programmable gate arrays; improved product performance; oxide TDDB; product reliability; speed enhancement; strain-Si FPGA product; ultimate spacer process; wafer level device reliability; CMOS technology; Capacitive sensors; Degradation; Field programmable gate arrays; Leakage current; Niobium compounds; Qualifications; Space technology; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2006 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    1-4244-0296-4
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2006.305239
  • Filename
    4098716