Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

Author

Weiss, Michael ; Sahoo, Abhaya Kumar ; Raya, Cristian ; Santorelli, Marco ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, T.

Author_Institution

Lab. IMS, Univ. de Bordeaux 1, Bordeaux, France

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

This paper studies the mutual coupling in trench isolated multi-emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring f_T and f_max of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three-dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in-house designed test structure.

Keywords

Ge-Si alloys; carbon; circuit simulation; heterojunction bipolar transistors; semiconductor device models; technology CAD (electronics); 3D thermal TCAD simulations; DC measurements; HBT technology STMicroelectronics; SiGe:C; circuit simulations; distributed transistor model; emitter fingers; in-house designed test structure; intradevice mutual thermal coupling characterization; multifinger HBTs; self-heating; three-dimensional thermal TCAD simulations; trench isolated multiemitter bipolar transistors; Couplings; Heating; Heterojunction bipolar transistors; Integrated circuit modeling; Thumb; Bipolar transistor; electro-thermal modeling; mutual heating; self-heating; thermal coupling; thermal impedance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628109

Filename

6628109