Title :
Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs
Author :
Weiss, Michael ; Sahoo, Abhaya Kumar ; Raya, Cristian ; Santorelli, Marco ; Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, T.
Author_Institution :
Lab. IMS, Univ. de Bordeaux 1, Bordeaux, France
Abstract :
This paper studies the mutual coupling in trench isolated multi-emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three-dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in-house designed test structure.
Keywords :
Ge-Si alloys; carbon; circuit simulation; heterojunction bipolar transistors; semiconductor device models; technology CAD (electronics); 3D thermal TCAD simulations; DC measurements; HBT technology STMicroelectronics; SiGe:C; circuit simulations; distributed transistor model; emitter fingers; in-house designed test structure; intradevice mutual thermal coupling characterization; multifinger HBTs; self-heating; three-dimensional thermal TCAD simulations; trench isolated multiemitter bipolar transistors; Couplings; Heating; Heterojunction bipolar transistors; Integrated circuit modeling; Thumb; Bipolar transistor; electro-thermal modeling; mutual heating; self-heating; thermal coupling; thermal impedance;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628109
