DocumentCode
3476165
Title
Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps
Author
Dash, G.N. ; Pradhan, J. ; Swain, S.K. ; Pattanaik, S.R.
Author_Institution
Sch. of Phys., Sambalpur Univ., Burla, India
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode. In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored. It is exciting to observe a conversion efficiency of 17.24 % from the IMPAT T diode with the proposed doping steps.
Keywords
IMPATT diodes; semiconductor doping; silicon compounds; wide band gap semiconductors; 4H-SiC IMPATT diode; avalanche region width; avalanche zone; doping pattern; efficiency 17.24 percent; electric field; high-efficiency realization; optimized doping steps; terahertz characteristics; Doping; Educational institutions; IMPATT; Microwave; SiC;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628115
Filename
6628115
Link To Document