• DocumentCode
    3476449
  • Title

    Failure of chip sized packaging (CSP) under coupling fields of electrical current and thermal cycle

  • Author

    Gao, Feng ; Zhu, Q.S. ; Zheng, Kai ; Liu, Z.Q. ; Guo, J.D. ; Zhang, Leiqi ; Shang, J.K.

  • Author_Institution
    Shenyang Nat. Lab. for Mater. Sci., Inst. of Metal Res., Shenyang, China
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    30
  • Lastpage
    33
  • Abstract
    In this work, we investigated the failure behavior of a commercial chip size packaging (CSP) under coupling fields of electrical current and thermal cycles. The failure process was real-time monitored through the response resistance change. Under the coupling condition, the lifetime was much shorter than that in single thermal cycle condition. Instead of the void accumulation mechanism, the excessive Joule heat was considered to be failure mechanism in coupling condition. The high temperature induced rapid dissolution of Cu UBM and overheat led to the melt of the solder.
  • Keywords
    chip scale packaging; failure analysis; metallisation; solders; CSP; Cu; Joule heat; UBM; chip sized packaging; coupling fields; electrical current; failure mechanism; response resistance change; solder joint; thermal cycle; under bump metallization; void accumulation mechanism; Couplings; Electromigration; Loading; Soldering; Temperature measurement; Thermal resistance; Chip Size Packaging; Electromigration; Mechanical-electrical Coupling; Solder joint; Thermal cycle;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756414
  • Filename
    6756414