2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices

fYear

2006

fDate

Sept. 2006

Abstract

The following topics were dealt with: novel materials; microscopic simulation of semiconductor lasers in GaInNAs material system; GaInNAs/GaAs quantum wells; GaN-based devices; nanostructures; photodetectors and solar cells; laser diodes; optoelectronic integrated circuits; semiconductor optical amplifiers; photonic crystal devices; microoptical elements; fibre optics and networks; light emitting diodes; and photonic circuits

Keywords

gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; micro-optics; nanostructured materials; optical fibre networks; optical fibres; optical materials; photodetectors; photonic crystals; semiconductor optical amplifiers; semiconductor quantum wells; solar cells; GaInNAs material system; GaInNAs-GaAs; GaInNAs-GaAs quantum well; GaN-based device; fibre networks; fibre optics; laser diodes; light emitting diodes; microoptical elements; microscopic simulation; nanostructure; optoelectronic integrated circuits; photodetectors; photonic circuits; photonic crystal devices; semiconductor laser; semiconductor optical amplifiers; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306703

Filename

4098743