A low-power CMOS low-noise amplifier for ultra-wideband applications

Author

Chun-Tuan Chang ; Sen Wang

Author_Institution

Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

This paper presents a low-power CMOS low-noise amplifier (LNA) for ultra-wideband (UWB) applications using a cascoded common-gate (CG) topology. The CG-LNA is fabricated by a standard 0.18-μm CMOS process with a chip size of 0.77 mm². The CMOS UWB LNA dissipates 10.7 mW and achieves |S₁₁| below -10.2 dB, |S₂₂| below -9.7 dB, and |S₁₂| below -37.3 dB. Moreover, the power gain |S₂₁| achieves a maximum of 14.5 dB at 10.42 GHz, and the noise figure is 3.6±0.2 dB at the frequency of interest. The input P_1dB and IIP3 is -26.8 dBm and -15.7 dBm, respectively.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; ultra wideband communication; CG-LNA; UWB applications; cascoded common-gate topology; frequency 10.42 GHz; low-power CMOS low-noise amplifier; power 10.7 mW; size 0.18 mum; ultrawideband applications; CMOS integrated circuits; CMOS technology; Gain; Gain measurement; Indexes; Radio access networks; CMOS; common-gate(CG); low powe; low-noise amplifier(LNA); ultra-wideband(UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628133

Filename

6628133