Full dynamic power bipolar device models for circuit simulation

Author

Leturcq, Ph. ; Berraies, M.O. ; Laur, J.-P. ; Austin, P.

Author_Institution

CNRS, Toulouse, France

Volume

2

fYear

1998

fDate

17-22 May 1998

Firstpage

1695

Abstract

Accurate physics-based circuit-oriented power bipolar device models are feasible on a regional basis thanks to an analogue solution to the ambipolar diffusion equation. Several models have been proposed in this way to describe the operating characteristics of PIN diodes, bipolar transistors, GTO thyristors and IGBTs, with satisfactorily results. In this paper, the modeling approach is extended with a view to achieving a coherent simulation of power circuits involving several interacting semiconductor switches

Keywords

bipolar transistors; insulated gate bipolar transistors; network analysis; p-i-n diodes; power semiconductor diodes; power semiconductor switches; semiconductor device models; thyristors; GTO thyristors; IGBT; PIN diodes; ambipolar diffusion equation; analogue solution; bipolar transistors; circuit simulation; circuit-oriented power bipolar device models; coherent simulation; full dynamic power bipolar device models; interacting semiconductor switches; operating characteristics; power circuits; Bipolar transistors; Capacitive sensors; Circuit simulation; Equations; Insulated gate bipolar transistors; Power semiconductor switches; Power system modeling; Semiconductor diodes; Switching circuits; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE

Conference_Location

Fukuoka

ISSN

0275-9306

Print_ISBN

0-7803-4489-8

Type

conf

DOI

10.1109/PESC.1998.703409

Filename

703409