Effect of In-Segregation on sub bands in Ga1-x´Inx´Ny´As1-y´/GaAs quantum well for 1.3 and 1.55 $ m operation wavelengths

Author

Dixit, V. ; Liu, H.F. ; Xiang, N.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore

fYear

2006

fDate

Sept. 2006

Firstpage

5

Lastpage

6

Abstract

The In-segregation in 7.5-nm Ga_1-x´In_x´N_y´As_1-y´/GaAs single quantum well (QW) is studied theoretically. The nominal (In, N) contents in the QW are chosen to be (0.35, 0.015) and (039, 0.03) for the emission wavelengths at 1.3 and 1.55 mum, respectively. Muraki´s model is used to model the composition profiles in the QWs. In-plane strain, confinement potential, and sub band energy levels of the QW are calculated using multi-band effective mass theory. Our results show that the optical transition energies are approximately constant for the segregation efficiencies smaller than 0.7 in both QWs

Keywords

III-V semiconductors; effective mass; gallium arsenide; gallium compounds; indium compounds; photoluminescence; segregation; semiconductor quantum wells; 1.3 micron; 1.55 micron; Ga_1-xIn_xN_yAs_1-y-GaAs; Muraki model; band energy levels; emission wavelengths; multiband effective mass theory; optical transition energy; photoluminescence; segregation; semiconductor quantum well; Capacitive sensors; Charge carrier processes; Effective mass; Erbium; Gallium arsenide; Optical distortion; Photonic band gap; Quantum computing; Quantum mechanics; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306713

Filename

4098753