P-type shallow junction as-implanted profile prediction using Kinetic Monte Carlo simulation

Author

Fran Yannu Pramudyo, Antonius ; Kurniawan, Erry Dwi ; Manjunatha, M. ; Shao-Ming Yang ; Sheu, G.

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Ion implantation is a standart doping technique for semiconductor material. For shallow junction device, accurate predictions of ion implantation profiles are essential for process development and device characterization. For this purpose, accurate prediction of the doping profiles resulted from ion implantation will be studied using a few models of ion implantation. We collected data of BF2 as P-type ion implantation profiles using TCAD simulation software with different model of ion implantation and compared with Secondary Ion Mass Spectrometry (SIMS) data of ion implantation profile database as experimental data.

Keywords

Monte Carlo methods; boron; ion implantation; semiconductor devices; technology CAD (electronics); BF₂; P-type shallow junction as-implanted profile prediction; TCAD simulation software; doping profiles; ion implantation; kinetic Monte Carlo simulation; Abstracts; Implants; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628144

Filename

6628144