Accurate modeling of InGaN quantum wells

Author

Wenzel, Hans

Author_Institution

Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin

fYear

2006

fDate

Sept. 2006

Firstpage

7

Lastpage

8

Abstract

The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN QWs are accurately computed by a self-consistent solution of the Poisson equation and an eight-band k.p Schrodinger equation taking into account charges due to polarization fields, doping and free carriers. The results are used to investigate the dependence of the luminescence and gain spectra on the carrier injection

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; charge injection; gallium compounds; indium compounds; k.p calculations; luminescence; oscillator strengths; polarisation; semiconductor doping; semiconductor quantum wells; wide band gap semiconductors; InGaN; Poisson equation; band structure; carrier injection; doping; eight-band k.p Schrodinger equation; free carriers; luminescence; optical transitions; oscillator strengths; polarization fields; self-consistent solution; wurtzite strained quantum wells; Charge carrier density; Charge carrier processes; Doping; Luminescence; Optical computing; Optical polarization; Oscillators; Poisson equations; Quantum computing; Schrodinger equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306714

Filename

4098754