DocumentCode
3476753
Title
Optoelectronic Properties of InGaN SQW with Embedded AlGaN δ-Layer
Author
Park, Jongwoon ; Kaneta, Akio ; Funato, Mitsuru ; Kawakami, Yoichi
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ.
fYear
2006
fDate
11-14 Sept. 2006
Firstpage
9
Lastpage
10
Abstract
We investigate the carrier transport and optical properties of a thick InGaN single quantum well (SQW) where an AlGaN δ-layer is embedded. It is shown that the results of photoluminescence (PL) measurements are consistent with the numerical predictions
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN-AlGaN-InGaN; PL measurements; SQW; carrier transport; delta-layer; optical properties; optoelectronic properties; photoluminescence; single quantum well; Aluminum gallium nitride; Charge carrier processes; Electron mobility; Epitaxial growth; Gallium nitride; Indium; Neodymium; Poisson equations; Schrodinger equation; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN
0-7803-9755-X
Type
conf
DOI
10.1109/NUSOD.2006.306715
Filename
4098755
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