Simulation of InGaN/GaN multiple quantum well light-emitting diodes with Quantum Dot electrical and optical effects

Author

Xia, C.S. ; Lu, W. ; Simon Li, Z.M. ; Li, Z. M Simon

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci.

fYear

2006

fDate

Sept. 2006

Firstpage

15

Lastpage

16

Abstract

We report on the 2D simulations of electrical and optical characteristics for green color InGaN/GaN multiple quantum well light-emitting diodes by the APSYS software. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered with quantum dot model. The simulation results are in good agreement with experiment and indicate that quantum dot spontaneous emission and non-equilibrium quantum transport play an important role in the InGaN/GaN multiple quantum well light-emitting diodes

Keywords

III-V semiconductors; carrier mobility; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device models; semiconductor heterojunctions; spontaneous emission; wide band gap semiconductors; 2D simulations; APSYS software; EL spectrum; InGaN-GaN; carrier transport; electrical characteristics; multiple quantum well light-emitting diodes; nonequilibrium quantum transport; optical characteristics; quantum dot electrical effects; quantum dot model; quantum dot optical effects; quantum dot spontaneous emission; Gallium nitride; Light emitting diodes; Optical polarization; Physics; Quantum dots; Quantum well devices; Ray tracing; Resistance heating; Spontaneous emission; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306718

Filename

4098758