The reliability of SiGe HBT under swift heavy ion irradiation

Author

Yabin Sun ; Jun Fu ; Jun Xu ; Yudong Wang ; Wei Zhou ; Wei Zhang ; Jie Cui ; Gaoqing Li ; Zhihong Liu

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Tsinghua Univ., Beijing, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were irradiated by 25Mev Si⁴⁺ ion with equivalent absorbed dose from 300 krad(Si) to 10 Mrad(Si). Pre- and post-irradiation direct current (DC) characteristics were used to quantify the dose tolerance to the heavy ion irradiation. Base current was found more sensitive than collector current and current gain appeared to decline with the ion fluence increasing. An unexpected increase in emitter current was observed in the reversed-mode operation. The reverse leakage current of base-collector and base-emitter junction increased with the increase in ion fluence. The displacement damages were thought to be mainly contributed to performance degradation of SiGe HBT.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; ion beam effects; leakage currents; semiconductor device reliability; SiGe; base current; base-collector junction; base-emitter junction; collector current; current gain; dose tolerance; electron volt energy 25 MeV; emitter current; equivalent absorbed dose; heterojunction bipolar transistors; ion fluence; performance degradation; reverse leakage current; reversed mode operation; semiconductor device reliability; swift heavy ion irradiation; Ions; Junctions; Radiation effects; Silicon; Displacement damage; SiGe HBT; swift heavy ion;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628148

Filename

6628148