Title :
3D Simulation of InGaN/GaN Micro-Ring Light-Emitting Diodes
Author :
Sheng, Y. ; Shmatov, O. ; Li, Z. M Simon
Author_Institution :
Crosslight Software, Shanghai
Abstract :
We employed the APSYS software to perform 3D electrical and ray-tracing simulations on micro-ring light-emitting diodes (LEDs) to verify previous experimental findings that they have higher extraction efficiency than micro-disk and broad area LEDs. 3D ray-tracing indicates the importance of inter-ring optical interactions. Furthermore we found that the higher light extraction efficiency is at the expense of reduced internal quantum efficiency as injection current is increased
Keywords :
III-V semiconductors; digital simulation; gallium compounds; indium compounds; light emitting diodes; micro-optics; physics computing; ray tracing; 3D electrical simulation; 3D ray-tracing simulation; 3D simulation; APSYS software; InGaN-GaN; InGaN-GaN microring light-emitting diode; LED; injection current; inter-ring optical interaction; internal quantum efficiency; light extraction efficiency; Electric resistance; Gallium nitride; Indium; Light emitting diodes; Quantum well devices; Radiative recombination; Ray tracing; Software performance; Solid modeling; Spontaneous emission;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306720
