Title :
Status and challenges of time dependent transport through nanostructures
Author_Institution :
Dept. of Phys., Univ. of Hong Kong
Abstract :
The quantum coherent AC transport is found to be mediated by resonant states extending the entire molecule, or mediated by localized states within the molecule. The theoretical analysis shows that a critical control of conductance of short molecules can achieved by a finite frequency AC bias. The transport properties of molecular devices under a high frequency AC bias is a difficult problem of quantum transport theory, and a first principles self-consistent analysis of finite frequency AC conductance for the Metal-Molecule-Metal device configuration. For atomistic analysis of the transport property through Metal-Molecule-Metal device, the NEGF-DFT formalism is used. In this ab initio technique and LCAO formalism is used, where density functional theory (DFT) is carried out within the Keldysh nonequilibrium Green´s function (NEGF) formalism. From both theory and application point of views, another important issue which has yet to be resolved is to predict how fast or how slow a nanoelectronic device can turn on/off a current from quantum mechanical first principles
Keywords :
Green´s function methods; LCAO calculations; ab initio calculations; density functional theory; localised states; molecular electronics; nanoelectronics; nanostructured materials; Keldysh nonequilibrium Green´s function formalism; LCAO formalism; NEGF-DFT formalism; ab initio technique; density functional theory; finite frequency AC conductance; first principle self-consistent analysis; localized states; metal-molecule-metal device; molecular devices; nanoelectronic device; nanostructured materials; quantum coherent AC transport; resonant states; time dependent transport; transport property; Atomic force microscopy; Atomic layer deposition; Frequency; Lead; Nanoscale devices; Nanostructures; Particle scattering; Physics; Quantum mechanics; Voltage control;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306721