DocumentCode
3476863
Title
Status and challenges of time dependent transport through nanostructures
Author
Wang, Jian
Author_Institution
Dept. of Phys., Univ. of Hong Kong
fYear
2006
fDate
Sept. 2006
Firstpage
21
Lastpage
22
Abstract
The quantum coherent AC transport is found to be mediated by resonant states extending the entire molecule, or mediated by localized states within the molecule. The theoretical analysis shows that a critical control of conductance of short molecules can achieved by a finite frequency AC bias. The transport properties of molecular devices under a high frequency AC bias is a difficult problem of quantum transport theory, and a first principles self-consistent analysis of finite frequency AC conductance for the Metal-Molecule-Metal device configuration. For atomistic analysis of the transport property through Metal-Molecule-Metal device, the NEGF-DFT formalism is used. In this ab initio technique and LCAO formalism is used, where density functional theory (DFT) is carried out within the Keldysh nonequilibrium Green´s function (NEGF) formalism. From both theory and application point of views, another important issue which has yet to be resolved is to predict how fast or how slow a nanoelectronic device can turn on/off a current from quantum mechanical first principles
Keywords
Green´s function methods; LCAO calculations; ab initio calculations; density functional theory; localised states; molecular electronics; nanoelectronics; nanostructured materials; Keldysh nonequilibrium Green´s function formalism; LCAO formalism; NEGF-DFT formalism; ab initio technique; density functional theory; finite frequency AC conductance; first principle self-consistent analysis; localized states; metal-molecule-metal device; molecular devices; nanoelectronic device; nanostructured materials; quantum coherent AC transport; resonant states; time dependent transport; transport property; Atomic force microscopy; Atomic layer deposition; Frequency; Lead; Nanoscale devices; Nanostructures; Particle scattering; Physics; Quantum mechanics; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN
0-7803-9755-X
Type
conf
DOI
10.1109/NUSOD.2006.306721
Filename
4098761
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