• DocumentCode
    3476863
  • Title

    Status and challenges of time dependent transport through nanostructures

  • Author

    Wang, Jian

  • Author_Institution
    Dept. of Phys., Univ. of Hong Kong
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    21
  • Lastpage
    22
  • Abstract
    The quantum coherent AC transport is found to be mediated by resonant states extending the entire molecule, or mediated by localized states within the molecule. The theoretical analysis shows that a critical control of conductance of short molecules can achieved by a finite frequency AC bias. The transport properties of molecular devices under a high frequency AC bias is a difficult problem of quantum transport theory, and a first principles self-consistent analysis of finite frequency AC conductance for the Metal-Molecule-Metal device configuration. For atomistic analysis of the transport property through Metal-Molecule-Metal device, the NEGF-DFT formalism is used. In this ab initio technique and LCAO formalism is used, where density functional theory (DFT) is carried out within the Keldysh nonequilibrium Green´s function (NEGF) formalism. From both theory and application point of views, another important issue which has yet to be resolved is to predict how fast or how slow a nanoelectronic device can turn on/off a current from quantum mechanical first principles
  • Keywords
    Green´s function methods; LCAO calculations; ab initio calculations; density functional theory; localised states; molecular electronics; nanoelectronics; nanostructured materials; Keldysh nonequilibrium Green´s function formalism; LCAO formalism; NEGF-DFT formalism; ab initio technique; density functional theory; finite frequency AC conductance; first principle self-consistent analysis; localized states; metal-molecule-metal device; molecular devices; nanoelectronic device; nanostructured materials; quantum coherent AC transport; resonant states; time dependent transport; transport property; Atomic force microscopy; Atomic layer deposition; Frequency; Lead; Nanoscale devices; Nanostructures; Particle scattering; Physics; Quantum mechanics; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
  • Conference_Location
    Nanyang Technological University, Nanyang Executive Centre, Singapore, China
  • Print_ISBN
    0-7803-9755-X
  • Type

    conf

  • DOI
    10.1109/NUSOD.2006.306721
  • Filename
    4098761