Title :
Energy band structures of strained membrane quantum wires considering the redistribution of elastic strain relaxation
Author :
Ferdous, Fahmida ; Haque, Ashraful
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
Energy band structure of GaInAsP/InP compressively strained membrane quantum wires is theoretically studied using 8 band k.p method. Redistribution of elastic strain relaxation due to etching away of lower and upper InP clad layers in membrane quantum wires is considered in the calculation. It is found that strain redistribution increases the effective bandgap of membrane quantum wire structures causing a blue shift of the emission frequency. Comparison with effective bandgap calculation using a bulk-like approach neglecting confinement and band mixing demonstrates that neglect of these effects leads to an over-estimation of the change in the bandgap
Keywords :
III-V semiconductors; band structure; elasticity; energy gap; etching; gallium arsenide; gallium compounds; indium compounds; k.p calculations; membranes; semiconductor quantum dots; stress relaxation; GaInAsP-InP; band mixing; bandgap; blue shift; compressively strained membrane; elastic strain relaxation; emission frequency; energy band structures; etching; k.p method; quantum wire structures; Biomembranes; Capacitive sensors; Equations; Etching; Indium phosphide; Photonic band gap; Power engineering and energy; Quantum dot lasers; Semiconductor lasers; Wires;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306724
