The modeling of dark characteristics for long-wavelength HgCdTe photodiode

Author

Quan, Zhijue ; Chen, Xiaoshuang ; Lu, Wei

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci.

fYear

2006

fDate

Sept. 2006

Firstpage

29

Lastpage

30

Abstract

A data-processing approach has been developed to obtain device parameters from resistance-voltage (R-V) characteristics measured on long-wavelength HgCdTe n-on-p photodiodes. A simple carrier density approximation is proposed to take account of carrier degeneracy and conduction band non-parabolicity into its physical model. Some basic parameters of devices can be extracted from measured R-V curves

Keywords

II-VI semiconductors; cadmium compounds; carrier density; conduction bands; mercury compounds; photodiodes; HgCdTe; R-V curve; carrier degeneracy; carrier density; conduction band; dark characteristics; device parameter; long-wavelength HgCdTe photodiode; n-on-p photodiode; resistance-voltage characteristics; Cadmium compounds; Charge carrier density; Current measurement; Electrical resistance measurement; Infrared detectors; Measurement standards; Photodiodes; Photonic band gap; Physics; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306725

Filename

4098765