DocumentCode
3476953
Title
GCT (gate commutated turn-off) thyristor and gate drive circuit
Author
Yamamoto, Masanori ; Satoh, Katsumi ; Nakagawa, T. ; Kawakami, Akira
Author_Institution
Mitsubishi Electr. Corp., Japan
Volume
2
fYear
1998
fDate
17-22 May 1998
Firstpage
1711
Abstract
The GCT (gate commutated turn-off) thyristor has superior characteristics; especially, snubberless turn-off capability and higher turn-on capability. These characteristics are influenced by the performance of the gate drive circuit. This paper presents simulation results and experimental results about turn-on and turn-off characteristics of GCT thyristor with gate drive circuit
Keywords
commutation; driver circuits; thyristor applications; gate commutated turn-off thyristor; gate drive circuit; higher turn-on capability; simulation; snubberless turn-off capability; Anodes; Capacitance; Circuit simulation; Current density; Inductance; MOSFETs; Packaging; Snubbers; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location
Fukuoka
ISSN
0275-9306
Print_ISBN
0-7803-4489-8
Type
conf
DOI
10.1109/PESC.1998.703411
Filename
703411
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