Many-body optical gain in ZnO- and GaN-based quantum well lasers

Author

Park, Seoung-Hwan ; Doyeol Ahn

Author_Institution

Dept. of Electron. Eng., Catholic Univ. of Daegu, Kyeongbuk

fYear

2006

fDate

Sept. 2006

Firstpage

37

Lastpage

38

Abstract

In this paper, we review on electronic and the optical properties of ZnO-based QW lasers by using multi-band effective-mass theory and the non-Markovian gain model with many-body effects. We compare the results with those of GaN-based QW structures. In addition, we consider the crystal orientation effect on characteristics of ZnO- and GaN-based QW lasers. The self-consistent (SC) band structures and wave functions for the QW structures are obtained by solving the Schrodinger equation for electrons and the 3times3 Hamiltonian for holes

Keywords

II-VI semiconductors; III-V semiconductors; Schrodinger equation; band structure; effective mass; quantum well lasers; wide band gap semiconductors; GaN; GaN-based QW structure; GaN-based quantum well laser; Schrodinger equation; ZnO; ZnO-based quantum well laser; crystal orientation; electronic properties; many-body optical gain; multiband effective-mass theory; nonMarkovian gain model; optical properties; self-consistent band structure; Charge carrier processes; Gallium nitride; Laser modes; Laser theory; Photonic band gap; Piezoelectric polarization; Potential energy; Quantum well lasers; Wave functions; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306729

Filename

4098769