Carrier Recombination in Semiconductor Lasers: Beyond the ABC

Author

Hader, J. ; Moloney, J.V. ; Koch, S.W. ; Fan, L. ; Fallahi, M.

fYear

2006

fDate

Sept. 2006

Firstpage

39

Lastpage

40

Abstract

Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers. It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, J_SE=BN² and Auger, J_Auger=+CN³ is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities

Keywords

Auger effect; electron-hole recombination; semiconductor lasers; spontaneous emission; Auger recombination; carrier loss; carrier recombination; microscopic model; semiconductor laser; spontaneous emission; Composite materials; Dielectric materials; Equations; Laser modes; Laser theory; Microscopy; Optical materials; Radiative recombination; Semiconductor lasers; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306730

Filename

4098770