Extension of RESURF principle to dielectrically isolated power devices

Author

Huang, Y.S. ; Baliga, B.J.

Author_Institution

Dept of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1991

fDate

22-24 Apr 1991

Firstpage

27

Lastpage

30

Abstract

The RESURF (reduced surface field) principle has been extended to dielectrically isolated power devices including the effect of the formation of an inversion layer under the isolating oxide. Two device structures that allow high voltage operation have been investigated. Extensive two-dimensional simulations have been performed to relate the breakdown voltage to the doping and length of the drift region, and the thicknesses of the silicon layer and isolating oxide. It has been shown that lateral devices with breakdown voltages up to 600 V can be obtained

Keywords

bipolar transistors; electric breakdown of solids; insulated gate field effect transistors; power transistors; 600 V; HV type; MOSFET; RESURF principle; Si layer thickness; bipolar type; breakdown voltage; dielectrically isolated; doping; drift region length; high voltage operation; inversion layer; isolating oxide; power devices; reduced surface field; two-dimensional simulations; Anodes; Cathodes; Dielectric devices; Dielectric substrates; Doping; Isolation technology; MOSFETs; P-n junctions; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146059

Filename

146059