DocumentCode :
3477193
Title :
On-chip ESD protection designs in RF integrated circuits for radio and wireless applications
Author :
Ming-Dou Ker ; Chun-Yu Lin
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
CMOS technology has been used to implement the radio and wireless integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with low parasitic capacitance for radio and wireless applications is presented in this paper. The comparisons among these ESD protection designs are also discussed.
Keywords :
CMOS integrated circuits; electrostatic discharge; radiocommunication; radiofrequency integrated circuits; RF integrated circuits; electrostatic discharge robustness; input-output pads; low parasitic capacitance; nanoscale CMOS technology; on-chip ESD protection designs; radio applications; thinner gate oxide; wireless applications; CMOS integrated circuits; CMOS technology; Electrostatic discharges; Integrated circuit reliability; Radio frequency; Reliability theory; Electrostatic discharge (ESD); low capacitance; radio-frequency (RF);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628166
Filename :
6628166
Link To Document :
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