Effects of Size and Shape on Electronic States of Quantum Dots

Author

Ngo, C. ; Yoon, S. ; Fan, W. ; Chua, S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.

fYear

2006

fDate

Sept. 2006

Firstpage

51

Lastpage

52

Abstract

A strained-modified, single-band, constant-potential three-dimensional model was applied to study the dependence of electronic states of InAs/GaAs quantum dots (QDs) of different shapes and sizes. The energy trends decrease monotonously with increasing QD size (i.e. E~size^-gamma) but exhibit an optimum value under aspect ratio variation. The energy dependency gamma for volume is significantly different from that for base length and height. The ground state energy for broad tip is always lower than that of narrow tip. This study allows for effective QD bandgap engineering so as to fulfil specific requirements of different QD devices

Keywords

III-V semiconductors; conduction bands; gallium arsenide; ground states; indium compounds; semiconductor quantum dots; size effect; valence bands; 3D model; InAs-GaAs; QD devices; bandgap; electronic states; energy dependency; ground state energy; quantum dots; shape effects; size effects; Carrier confinement; Charge carrier processes; Energy states; Gallium arsenide; Optical modulation; Photonic band gap; Power engineering and energy; Quantum dots; Shape; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306736

Filename

4098776