Title :
Gate-drain capacitance behaviour of the DMOS power transistor under high current flow
Author :
Deml, C. ; Hoffmann, K.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
The gate-drain capacitance of a power DMOS transistor was measured under high current conditions of up to 250 A. Depending on V/sub GS/ a strong nonlinear characteristic was observed. Using the measured capacitance data the characteristics of the inner MOS transistor and the epi region have been determined separately for parameterisation and modelling.
Keywords :
capacitance; capacitance measurement; power MOSFET; semiconductor device models; DMOS power transistor; epi region; gate-drain capacitance behaviour; high current conditions; high current flow; inner MOS transistor; measured capacitance data; modelling; nonlinear characteristic; parameterisation; Capacitance measurement; Capacitance-voltage characteristics; Circuits; Current measurement; Equations; Fluid flow measurement; Power measurement; Power transistors; Thermal loading; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703412
