DocumentCode :
3477415
Title :
Physically based models of electromigration
Author :
de Orio, R.L. ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Interconnect lifetimes due to electromigration (EM) failures are traditionally described by a modified Black equation [1] equation (1) where tf is the time to failure (TTF), A is a constant, j is the electrical current density, n is a fitting parameter which describes the impact of the current density, Ea is the fitted activation energy representing the failure mechanism, k is Boltzmann´s constant, and T is the temperature. Originally, Black´s derivation resulted in n = 2 [1]. However, this was the source of an extensive debate [2], until more physically sound models showed that n = 2 is associated with a failure dominated by the void nucleation time [3], while n = 1 implies a failure dominated by the void growth time [4].
Keywords :
current density; electromigration; failure analysis; interconnections; Black derivation; Boltzmann constant; EM failures; electrical current density; electromigration; electromigration failures; fitted activation energy; fitting parameter; interconnect lifetimes; modified Black equation; physically-based model; physically-sound model; time-to-failure; void growth time; void nucleation time; Current density; Electromigration; Mathematical model; Metals; Shape; Stress; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628175
Filename :
6628175
Link To Document :
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