• DocumentCode
    3477415
  • Title

    Physically based models of electromigration

  • Author

    de Orio, R.L. ; Selberherr, Siegfried

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Interconnect lifetimes due to electromigration (EM) failures are traditionally described by a modified Black equation [1] equation (1) where tf is the time to failure (TTF), A is a constant, j is the electrical current density, n is a fitting parameter which describes the impact of the current density, Ea is the fitted activation energy representing the failure mechanism, k is Boltzmann´s constant, and T is the temperature. Originally, Black´s derivation resulted in n = 2 [1]. However, this was the source of an extensive debate [2], until more physically sound models showed that n = 2 is associated with a failure dominated by the void nucleation time [3], while n = 1 implies a failure dominated by the void growth time [4].
  • Keywords
    current density; electromigration; failure analysis; interconnections; Black derivation; Boltzmann constant; EM failures; electrical current density; electromigration; electromigration failures; fitted activation energy; fitting parameter; interconnect lifetimes; modified Black equation; physically-based model; physically-sound model; time-to-failure; void growth time; void nucleation time; Current density; Electromigration; Mathematical model; Metals; Shape; Stress; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628175
  • Filename
    6628175