Title :
SiC device technology for energy efficiency and high temperature operation
Author_Institution :
Sch. of ICT, KTH R. Inst. of Technol., Kista, Sweden
Abstract :
This paper will give a brief overview of current state of the art device technology for SiC discrete devices and applications. The superior energy efficiency of SiC devices will be demonstrated and compared to its silicon counterparts.
Keywords :
power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; energy efficiency; high-temperature operation; silicon carbide device technology; silicon carbide discrete devices; Rectifiers; Reliability; Silicon Carbide; Switch; devices; high voltage; low loss; transistor;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628179
