Title :
Performance analysis of low power and high frequency novel RF Power Amplifier for 4G systems
Author :
Guha, Koushik ; Ganguly, Prapti ; Baishya, S.
Author_Institution :
Dept. of ECE, N.I.T., Silchar, India
Abstract :
This paper deals with the design and simulation of low power and highly efficient RF Power Amplifiers for 4th Generation Wireless Systems. Efficient Linearization and Bandwidth Enhancement techniques are implemented to increase the performance metrics of the power amplifier under consideration. A 90nm CMOS, 60 GHz fully integrated power amplifier has been designed for the 4th Generation Wireless Systems. It has been optimized to deliver maximum linear output power and a considerable amount of gain in the VHF band around 60 GHz. The schematic of the two stage power amplifier has been designed using Agilent´s Advanced Design System software. The schematic is used to plot Gain, Linearity, Noise Figure and Stability.
Keywords :
4G mobile communication; CMOS analogue integrated circuits; circuit optimisation; electronic design automation; field effect MIMIC; integrated circuit design; linearisation techniques; low-power electronics; millimetre wave power amplifiers; 4th generation wireless systems; 4G systems; CMOS fully integrated power amplifier; RF power amplifier design; RF power amplifier simulation; VHF band; advanced design system software; bandwidth enhancement technique; frequency 60 GHz; high frequency RF power amplifier; linearization technique; low power RF power amplifier; maximum linear output power; performance analysis; performance characteristics optimization; performance metrics; size 90 nm; two stage power amplifier; Bandwidth; Capacitance; Circuit synthesis; Gain; Predistortion; Transmitters;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628180
