DocumentCode
3477565
Title
Novel silicon-based tunneling FET with junction engineering and gate configuration for low power applications (invited)
Author
Ru Huang ; Qianqian Huang ; Zhan Zhan ; Chunlei Wu ; Yingxin Qiu ; Yangyuan Wang
Author_Institution
Key Lab. of Microelectron. Devices & Circuits (Minist. of Educ., Peking Univ., Beijing, China
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
In this paper, two novel silicon-based TFETs are discussed, including Si junction-modulated TFET (JTFET) with the equivalent function to achieve ideally abrupt doping profile and multi-finger-gate TFET of dopant-segregated Schottky Barrier source (mFSB-TFET) with adaptive operation mechanism for better performance tradeoff.
Keywords
elemental semiconductors; junction gate field effect transistors; low-power electronics; silicon; tunnel transistors; JTFET; Si; adaptive operation mechanism; dopant-segregated Schottky barrier source; doping profile; gate configuration; junction engineering; junction-modulated TFET; low power applications; mFSB-TFET; multi-finger-gate; performance tradeoff; tunneling FET; Annealing; Implants; Logic gates; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628182
Filename
6628182
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