Title :
A scalable compact model for generic HEMTs in III–V/Si co-integrated hybrid design
Author :
Zhou, Xiaoxin ; Zhang, J.B. ; Syamal, Binit ; Zhu, Z.M. ; Yuan, Lei
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this paper, we present a unified compact model (Xsim) that is based on drift-diffusion/surface-potential (DD/SP) formalism for Si-bulk/SOI MOSFETs by incorporating a unified 2-dimensional electron gas (2DEG) model for extension to generic III-V MIS-HEMTs. The model has been validated with TCAD and experimental data for GaN-based HEMTs with nanometer gate lengths. Digital (inverter/ring-oscillator) and analog (cut-off frequency) circuit performance prediction based on nanometer GaN devices are also demonstrated. The ultimate goal is to develop a unified scalable model for III-V/Si co-integrated hybrid circuit design.
Keywords :
III-V semiconductors; MOSFET; elemental semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; silicon; technology CAD (electronics); two-dimensional electron gas; wide band gap semiconductors; 2DEG model; DD-SP formalism; GaN; III-V co-integrated hybrid circuit design; SOI MOSFET; Si; TCAD; Xsim; analog circuit performance prediction; cut-off frequency; digital circuit performance prediction; drift-diffusion-surface-potential formalism; generic MIS-HEMT; inverter-ring-oscillator; nanometer devices; nanometer gate lengths; scalable compact model; unified 2-dimensional electron gas model; Buildings; Circuit synthesis; Educational institutions; Gallium nitride; HEMTs; Nanoscale devices; Semiconductor device modeling; 2DEG; III–V/Si co-integration; MIS-HEMTs; compact model; hybrid design;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628183
