Title :
High voltage silicon-on-insulator (SOI) MOSFETs
Author :
Lu, Qin ; Ratnam, P. ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
Novel lateral high-voltage SOI MOSFETs capable of withstanding up to 400 V are presented. The design optimization, fabrication, and experimental results obtained for these devices are presented. The devices can be implemented using a CMOS-SOI compatible process. To ensure high voltage capability, the reduced surface field (RESURF) technique and field plates are used. The blocking, DC, and transient characteristics of the devices were investigated both theoretically and experimentally. Optimization of the process parameters involved in the design of the structures is presented
Keywords :
insulated gate field effect transistors; power transistors; semiconductor-insulator boundaries; 400 V; CMOS-SOI compatible process; DC characteristics; HV transistors; RESURF; SOI MOSFETs; blocking characteristics; design optimization; fabrication; field plates; high voltage capability; reduced surface field; transient characteristics; CMOS process; CMOS technology; Design optimization; Electric breakdown; Fabrication; Ice; Low voltage; MOSFETs; Silicon on insulator technology; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146061
