Evaluation of electrostatic discharge (ESD) characteristics for bottom contact organic thin film transistor

Author

Zhiwei Liu ; Aihua Dong ; Zhuoyu Ji ; Long Wang ; Linfeng He ; Wei Liang ; Jiabin Miao ; Liou, Juin J.

Author_Institution

Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Electrostatic discharge (ESD) performance of the bottom-contact organic thin-film transistors (OTFT) is investigated experimentally for the first time using the transmission line pulsing technique. The failure currents and leakage currents of OTFTs having different channel lengths and finger structures are characterized. Physical insights and measured data are offered to explain the failure of these devices at relatively low ESD stress level.

Keywords

electrostatic discharge; failure analysis; leakage currents; organic field effect transistors; thin film transistors; transmission lines; ESD characteristics; OTFT; bottom contact organic thin film transistor; channel lengths; electrostatic discharge characteristic evaluation; failure currents; finger structures; leakage currents; low ESD stress level; transmission line pulsing technique; Films; Fingers; Transistors; Electrostatic discharge (ESD); OTFT; TLP; bottom contact; failure current It2; leakage current; top-contact;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628187

Filename

6628187