DocumentCode :
3477649
Title :
Evaluation of electrostatic discharge (ESD) characteristics for bottom contact organic thin film transistor
Author :
Zhiwei Liu ; Aihua Dong ; Zhuoyu Ji ; Long Wang ; Linfeng He ; Wei Liang ; Jiabin Miao ; Liou, Juin J.
Author_Institution :
Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Electrostatic discharge (ESD) performance of the bottom-contact organic thin-film transistors (OTFT) is investigated experimentally for the first time using the transmission line pulsing technique. The failure currents and leakage currents of OTFTs having different channel lengths and finger structures are characterized. Physical insights and measured data are offered to explain the failure of these devices at relatively low ESD stress level.
Keywords :
electrostatic discharge; failure analysis; leakage currents; organic field effect transistors; thin film transistors; transmission lines; ESD characteristics; OTFT; bottom contact organic thin film transistor; channel lengths; electrostatic discharge characteristic evaluation; failure currents; finger structures; leakage currents; low ESD stress level; transmission line pulsing technique; Films; Fingers; Transistors; Electrostatic discharge (ESD); OTFT; TLP; bottom contact; failure current It2; leakage current; top-contact;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628187
Filename :
6628187
Link To Document :
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