DocumentCode
3477654
Title
Physics-based models of power semiconductor devices for the circuit simulator SPICE
Author
Kraus, R. ; Türkes, P. ; Sigg, J.
Author_Institution
Univ. of Bundeswehr Munich, Neubiberg, Germany
Volume
2
fYear
1998
fDate
17-22 May 1998
Firstpage
1726
Abstract
Models of power semiconductor devices are implemented in the circuit simulator PSpice. The combination of subcircuits and mathematical functions enables very compact solutions. High accuracy and validity in a wide operation range are obtained due to the derivation from device physics. Models of the power diode and the IGBT are presented as examples
Keywords
SPICE; digital simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; IGBT; SPICE circuit simulator; mathematical functions; nonpunchthrough IGBT; physics-based models; power diode; power semiconductor devices; subcircuits; Circuit simulation; Computational modeling; Equations; Insulated gate bipolar transistors; Mathematical model; Physics; Power electronics; Power semiconductor devices; SPICE; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location
Fukuoka
ISSN
0275-9306
Print_ISBN
0-7803-4489-8
Type
conf
DOI
10.1109/PESC.1998.703414
Filename
703414
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