Title :
Integrated High Speed VCSELs for Bi-Directional Optical Interconnects
Author :
Lysak, V.V. ; Chang, Ki Soo ; Lee, Yong Tak
Author_Institution :
Dept. of Info. & Commun., Gwangju Inst. of Sci. & Technol.
Abstract :
In this work, the simulation of the 980 nm InGaAs intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) is presented. We analyze the thermal, electrical and optical properties of such devices with the different thicknesses of contact layers. Results of simulations show the larger optical power for devices with thicker contact layers. The device with contact layers of 5lambda/4n thickness has the maximal modulation bandwidth
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; laser beams; laser cavity resonators; optical interconnections; semiconductor lasers; surface emitting lasers; 980 nm; InGaAs; InGaAs VCSEL; bi-directional optical interconnects; contact layer thickness; electrical properties; high speed VCSEL; intra-cavity-contacted oxide-confined laser; modulation bandwidth; optical properties; thermal properties; vertical-cavity surface-emitting lasers; Bandwidth; Bidirectional control; Contacts; High speed optical techniques; Indium gallium arsenide; Optical devices; Optical interconnections; Optical modulation; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306759
