• DocumentCode
    3477731
  • Title

    Charge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications

  • Author

    Shi, R.P. ; Huang, X.D. ; Leung, C.H. ; Lai, P.T.

  • Author_Institution
    Dept. of Electr. &Electron. Eng., Univ. of Hong Kong, Hong Kong, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The charge-trapping properties of niobium-doped La2O3 have been investigated based on MONOS capacitors. The memory device with niobium-doped La2O3 CTL shows better characteristics than that with pure La2O3 CTL in memory window and P/E properties. It also shows good retention characteristics. Therefore, the niobium-doped La2O3 is a promising candidate as CTL for nonvolatile memory applications.
  • Keywords
    MOS capacitors; doping; flash memories; lanthanum compounds; niobium; La2O3:Nb; MONOS capacitors; charge-trapping characteristics; high dielectric constant; metal-oxide-nitride-oxide-silicon-type flash memories; niobium doping; nonvolatile memory applications; trap density; Annealing; MONOS devices; Materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628190
  • Filename
    6628190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3477731