Title :
Impact of local variations in high-k dielectric on breakdown and recovery characteristics of advanced gate stacks
Author :
Pey, K.L. ; Shubhakar, K. ; Raghavan, N. ; Wu, Xiaojie ; Bosman, M.
Author_Institution :
Singapore Univ. of Technol. & Design (SUTD), Singapore, Singapore
Abstract :
Nanometer scale variations in property of polycrystalline high-κ (HK) dielectrics significantly affect the reliability and performance of HK-based metal-oxide-semiconductor (MOS) devices. Electrical and physical insight into the kinetics and variability in degradation and breakdown trends of dielectrics is essential to understand the physics and stochastics of failure in transistors. This study will in turn help to understand charge trapping mechanisms in Flash memory and filamentary resistive switching in RRAM. In this work, we present a study on impact of local variations of HK dielectric properties on its degradation, breakdown and recovery process using a combination of Monte Carlo simulations and experimental results with nanometer scale resolution.
Keywords :
MOSFET; Monte Carlo methods; electric breakdown; electron traps; failure analysis; flash memories; high-k dielectric thin films; random-access storage; semiconductor device reliability; HK dielectric properties; HK-based MOS devices; HK-based metal-oxide-semiconductor devices; Monte Carlo simulations; advanced gate stacks; breakdown characteristics; charge trapping mechanisms; dielectrics breakdown trends; filamentary resistive switching; flash memory; high-k dielectric; local variation impact; nanometer scale variations; recovery characteristics; transistor failure; Dielectrics; Electrodes; Logic gates; Nanoscale devices; Nickel alloys; Silicides; Switches;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628192
