Title :
Effect of F on B penetration through gate oxide for BF2 implants used to obtain ultra-shallow junctions by RTA
Author :
Sultan, A. ; Craig, M. ; Banejee, S. ; List, S. ; Grider, T. ; McNeil, V.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
We have studied enhancement of B penetration due to the presence of F, when BF2 implants are used for s/d extension implants in p+ poly gate PMOS devices. A 0.35 μm CMOS full flow is used to characterize the change in linear and saturation threshold voltage due to increased B penetration. The effect of F on other device characteristics is also examined. Contrary to previous concerns, it is found that the threshold voltage shift is quite small (18 mV) for the realistic conditions studied (2×1014 cm-2 or BF2 dose). The presence of F does not degrade other electrical characteristics such as leakage current, sub-threshold slope or transconductance
Keywords :
CMOS integrated circuits; MOSFET; boron; characteristics measurement; fluorine; ion implantation; leakage currents; rapid thermal annealing; secondary ion mass spectra; 0.35 mum; B penetration enhancement; BF2 implants; CMOS full flow; F presence; RTA; SIMS; Si:B,F; Si:BF2; electrical characteristics; gate oxide penetration; leakage current; linear threshold voltage; p+ poly gate PMOS devices; saturation threshold voltage; source/drain extension implants; sub-threshold slope; threshold voltage shift; transconductance; ultra-shallow junctions; Boron; Geometry; Instruments; MOS devices; MOSFETs; Microelectronic implants; Rapid thermal annealing; Superluminescent diodes; Temperature; Threshold voltage;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586106
