• DocumentCode
    3477816
  • Title

    GeO2/PZT resistive random access memory devices with Ni electrode

  • Author

    Kun-I Chou ; Chun-Hu Cheng ; Chin, Alvin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85°C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.
  • Keywords
    lead compounds; nickel; oxygen compounds; random-access storage; tantalum compounds; titanium compounds; zirconium compounds; DC cycling; Ni-GeO2-PZT-TaN; RRAM; resistance window; resistive random access memory devices; temperature 85 degC; unipolar mode operation; Dielectrics; Educational institutions; Electrodes; Nickel; Resistance; Silicon; Switches; GeO2; PZT; RRAM; TiO2;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628194
  • Filename
    6628194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3477816