Comparison of zero degree and tilted arsenic MDD implants

Author

Tripsas, Nicholas H. ; Nayak, Deepak ; Luning, Scott

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

33

Lastpage

36

Abstract

N-type LDD´s are commonly formed using Phosphorus implants. Phosphorus has the advantage of easily forming graded junctions that are necessary for reducing hot carrier injection. However, as gate dimensions continue to decrease, short channel effects become excessive with Phosphorus. Arsenic has the advantage of lower diffusivity. This allows for higher doping levels while maintaining shallow junction depths; such structures are known as MDD´s. Replacing a zero degree Phosphorus implant with a zero degree Arsenic implant results in high field areas under gates. This increases hot carrier injection. Angled Arsenic implants with multiple twists spread junctions laterally. This reduces hot carrier injection while still retaining the other benefits of Arsenic

Keywords

MOSFET; arsenic; hot carriers; ion implantation; semiconductor device reliability; 0.35 mum; Si:As; diffusivity; graded junctions; high doping levels; high field areas; hot carrier injection; lateral junction spread; medium doped drain; multiple twists; nMOS transistors; shallow junction depths; short channel effects; tilted As MDD implants; transistor parameters; zero degree As MDD implants; Degradation; Doping; Hot carrier injection; Human computer interaction; Implants; Testing; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586107

Filename

586107