Title :
L-band power amplifier exhibits highest ruggedness rating
Author :
Battaglia, B. ; Rice, D. ; Le, P. ; Davies, R. ; Lutz, D. ; Gogoi, B. ; Elliott, A.
Author_Institution :
HVVi Semicond. Inc, Phoenix, AZ
Abstract :
A new silicon transistor has been developed that enables the design of high power amplifiers through its unique high voltage capability and the novel device structure. The HVVFETtrade (high voltage vertical field effect transistor) technology has been optimized for pulsed applications above 1 GHz. The unique device structure enables high power amplifier designs that exhibit extreme ruggedness. The power amplifiers produced with the HVVFET technology are characterized at rated output power, full supply voltage and output VSWR of 20:1 over all phase angles in production.
Keywords :
microwave field effect transistors; microwave power amplifiers; HVVFET technology; L-band power amplifier; full supply voltage; high power amplifiers; high voltage capability; high voltage vertical field effect transistor technology; output VSWR; phase angles; rated output power; ruggedness rating; silicon transistor; FETs; High power amplifiers; L-band; Optimized production technology; Power amplifiers; Power generation; Power supplies; Pulse amplifiers; Silicon; Voltage;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4957900
