DocumentCode :
3478012
Title :
Fin Prin: Analysis and Optimization of FinFET Logic Circuits under PVT Variations
Author :
Yang Yang ; Jha, Niraj K.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
fYear :
2013
fDate :
5-10 Jan. 2013
Firstpage :
350
Lastpage :
355
Abstract :
Continued scaling of bulk CMOS technology is facing formidable challenges. As an alternative, FinFETs offer a promising solution for the 22nm technology node and beyond though they still suffer from process, voltage, and temperature (PVT) variations. Thus, in order to analyze the delay of FinFET logic circuits, statistical static timing analysis (SSTA) is more suitable than traditional static timing analysis (STA). In this paper, we consider voltage and temperature variations in addition to process variations. We propose a simplified FinFET timing model with an average absolute error of 3.4% and 4.4%, respectively, for gate output slope and gate delay over all logic gates and sizes, compared to accurate quasi Monte-Carlo (QMC) simulations. We extend an existing SSTA algorithm to statistical leakage and dynamic power analysis as well, and evaluate its performance relative to Monte-Carlo (MC) simulation. Finally, we show that FinFET logic circuits need to be carefully optimized with temperature taken into consideration, since the ratio between the leakage and dynamic power of a circuit can vary drastically depending on the operating temperature assumed.
Keywords :
CMOS logic circuits; MOSFET; Monte Carlo methods; delay circuits; logic gates; scaling circuits; statistical analysis; timing circuits; FinFET logic circuit; PVT variation; QMC; SSTA; bulk scaling CMOS technology; dynamic power analysis; gate delay; gate output slope; logic gate; optimization; process-voltage-temperature variation; quasiMonte-Carlo simulation; size 22 nm; statistical leakage; statistical static timing analysis; Computational modeling; Delay; FinFETs; Integrated circuit modeling; Logic gates; Optimization; FinFET; PVT variations; SSTA; leakage power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design and 2013 12th International Conference on Embedded Systems (VLSID), 2013 26th International Conference on
Conference_Location :
Pune
ISSN :
1063-9667
Print_ISBN :
978-1-4673-4639-9
Type :
conf
DOI :
10.1109/VLSID.2013.213
Filename :
6472665
Link To Document :
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