Title :
Wafer charge neutralization systems-simulation and experiment
Author :
Mehta, S. ; Walther, S.R. ; Mack, M.E. ; Daniel, P. ; Ng, Che-Hoo
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
Abstract :
In this paper two-dimensional numerical modeling has been used to simulate the differences between electron and plasma flood systems in the physics of charging. In addition, the affects of the design of the Faraday system on the effectiveness of the flooding system have been discussed. To substantiate and supplement the simulations, measurements of floating potential using a real time charge sensor are compared to the simulation results for plasma potential
Keywords :
ion implantation; semiconductor process modelling; surface charging; Faraday system; electron flood gun; floating potential; high current implantation; plasma flood gun; plasma potential; real time charge sensor; simulation; two-dimensional numerical model; wafer charge neutralization; Electron beams; Floods; Ion beams; Optical coupling; Particle beams; Plasma measurements; Plasma simulation; Plasma temperature; Space charge; Temperature distribution;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586122
