Title :
GaN X-band 43% internally-matched FET with 60W output power
Author :
Kimura, M. ; Yamauchi, K. ; Yamanaka, K. ; Noto, H. ; Kuwata, E. ; Otsuka, H. ; Inoue, A. ; Kamo, Y. ; Miyazaki, M.
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura
Abstract :
An X-band high efficiency GaN internally-matched FET has been developed. Asymmetric matching circuit layout is employed to avoid decrease of efficiency caused by impedance mismatch and unbalance power dividing in matching circuits. The designed asymmetric input and output matching circuits have achieved equal dividing characteristics. A power added efficiency (PAE) of 43.4% and an output power of 47.8 dBm (60.3 W) have been achieved with the developed GaN internally-matched FET.
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium compounds; microwave power amplifiers; wide band gap semiconductors; GaN; X-band; asymmetric matching circuit layout; internally matched FET; matching circuits; power 60 W; power amplifier; Circuits; Gallium nitride; HEMTs; Impedance matching; Microwave FETs; Microwave amplifiers; Optical amplifiers; Power amplifiers; Power generation; Reflection; GaN HEMT; power added efficiency; power amplifier;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4957911
