DocumentCode :
3478193
Title :
A inductorless non-coherent IR-UWB CMOS receiver for 3–5GHz band applications
Author :
Ha, Min Cheol ; Park, Young Jin ; Eo, Yun Seong
Author_Institution :
Kwangwoon Univ., Seoul
fYear :
2008
fDate :
16-20 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
In this work, an IR-UWB RF Receiver compliant with 802.15.3a standard is fabricated on a single chip using 0.18um CMOS technology. The Receiver chip covers 3-5GHz lower band and 3-stage LNA is realized without on-chip inductor, which reduces the chip size dramatically down to 1.8mmx 0.9mm. The input signal is differential type in order to improve the immunity from common mode noise and undesired harmonic noise caused by detector and comparator circuit. The sensitivity of receiver is -70dBm at data rate of 5Mbps in condition of BER 10"3. The actual test shows that the UWB communication is properly operated up to 8m distance. The consumed power is 24mW, which is very useful for low power sensor network.
Keywords :
CMOS integrated circuits; low noise amplifiers; microwave amplifiers; microwave integrated circuits; radio receivers; receivers; ultra wideband technology; 802.15.3a standard; IR-UWB CMOS receiver; IR-UWB RF receiver; LNA; UWB communication; bit rate 5 Mbit/s; comparator circuit; distance 8 m; frequency 3 GHz to 5 GHz; low power sensor network; on-chip inductor; power 24 mW; size 0.18 mum; Bandwidth; CMOS technology; Circuits; Envelope detectors; Gain; Impedance; Noise figure; Pulse amplifiers; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
Type :
conf
DOI :
10.1109/APMC.2008.4957914
Filename :
4957914
Link To Document :
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