DocumentCode :
3478217
Title :
Interfacial reaction in Cu/Sn/Cu fine pitch interconnect during soldering
Author :
Mingliang Huang ; Ting Liu ; Ning Zhao ; Hua Hao
Author_Institution :
Lab. of Electron. Packaging Mater., Dalian Univ. of Technol., Dalian, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
382
Lastpage :
385
Abstract :
The interfacial reaction in Cu/Sn/Cu fine pitch interconnects during soldering at 250 °C was investigated in the present work. The morphological evolution and growth kinetics of the interfacial intermetallic compounds (IMCs) were studied. Cu6Sn5 scallops formed at the Sn/Cu interface and ripened with increasing reaction time. The dependence of average grain number on reaction time t followed t-0.70 relationship. During the solid-liquid interfacial reaction, different growth behavior of interfacial Cu6Sn5 scallops presented between the direction vertical to the interface and that parallel to the interface. According to the ratio of R/H, the growth of interfacial Cu6Sn5 could be divided into three stages, i.e., the initial stage, the ripening stage and the thickening stage. The growth of Cu6Sn5 scallops was controlled by grain boundary diffusion, while that of Cu3Sn was controlled by volume diffusion.
Keywords :
copper alloys; fine-pitch technology; grain boundary diffusion; interconnections; soldering; tin alloys; Cu-Sn-Cu; Cu3Sn; Cu6Sn5; IMC; average grain number; fine pitch interconnect; grain boundary diffusion; growth behavior; growth kinetics; interfacial intermetallic compounds; morphological evolution; reaction time; ripening stage; soldering; solid-liquid interfacial reaction; temperature 250 degC; thickening stage; volume diffusion; Diffusion bonding; Educational institutions; Electronics packaging; Grain boundaries; Kinetic theory; Soldering; Tin; Cu/Sn/Cu; fine pitch interconnect; growth kinetics; interfacial reaction; intermetallic compound;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756494
Filename :
6756494
Link To Document :
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