DocumentCode :
3478253
Title :
A 28.5GHz RF receiver front-end on a 70GHz ƒT SiGe BiCMOS process
Author :
Fortes, Fernando ; Mahmoudi, Reza ; Van Roermund, Arthur
Author_Institution :
Inst. de Telecomun., Lisbon
fYear :
2008
fDate :
16-20 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; Q-factor; receivers; BiCMOS process; LMDS applications; MIMIC; RF receiver front-end; SiGe; frequency 28.5 GHz; frequency 70 GHz; quality factor; BiCMOS integrated circuits; Frequency conversion; Germanium silicon alloys; Impedance matching; Inductors; Mixers; Noise figure; Noise measurement; Radio frequency; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
Type :
conf
DOI :
10.1109/APMC.2008.4957917
Filename :
4957917
Link To Document :
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