• DocumentCode
    3478253
  • Title

    A 28.5GHz RF receiver front-end on a 70GHz ƒT SiGe BiCMOS process

  • Author

    Fortes, Fernando ; Mahmoudi, Reza ; Van Roermund, Arthur

  • Author_Institution
    Inst. de Telecomun., Lisbon
  • fYear
    2008
  • fDate
    16-20 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MIMIC; Q-factor; receivers; BiCMOS process; LMDS applications; MIMIC; RF receiver front-end; SiGe; frequency 28.5 GHz; frequency 70 GHz; quality factor; BiCMOS integrated circuits; Frequency conversion; Germanium silicon alloys; Impedance matching; Inductors; Mixers; Noise figure; Noise measurement; Radio frequency; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008. APMC 2008. Asia-Pacific
  • Conference_Location
    Macau
  • Print_ISBN
    978-1-4244-2641-6
  • Electronic_ISBN
    978-1-4244-2642-3
  • Type

    conf

  • DOI
    10.1109/APMC.2008.4957917
  • Filename
    4957917