Short loop monitor for charging damage in implantation process

Author

Bersuker, Gennadi ; Werking, James ; Williamson, Gary ; Chan, Y. David

Author_Institution

SEMATECH, Austin, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

77

Lastpage

80

Abstract

The proposed quick turn-around monitor is shown to be effective in providing information on charging effects by monitoring changes in transistor parameters. Results for the source/drain and threshold voltage implantation in a commercially available high current implanter demonstrate high sensitivity of the monitor to both ion current and ion dose. The conventional calibration procedure for an electron shower with respect to an ion beam current is shown to be ineffective from a standpoint of transistor reliability

Keywords

integrated circuit testing; ion implantation; production testing; surface charging; charging damage; high current implanter; implantation process; ion current; ion dose; short loop monitor; source/drain implantation; threshold voltage implantation; transistor parameters; Annealing; Antenna measurements; Calibration; Condition monitoring; Current measurement; Manufacturing; Surface charging; Testing; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586130

Filename

586130