Short loop monitor for charging damage in implantation process

The proposed quick turn-around monitor is shown to be effective in providing information on charging effects by monitoring changes in transistor parameters. Results for the source/drain and threshold voltage implantation in a commercially available high current implanter demonstrate high sensitivity of the monitor to both ion current and ion dose. The conventional calibration procedure for an electron shower with respect to an ion beam current is shown to be ineffective from a standpoint of transistor reliability