Title :
Numerical study on nanowire tunnel FET with dynamic threshold operation architecture
Author :
Aixi Zhang ; Jin He ; Xiaoan Zhu ; Yue Hu ; Hao Wang ; Wanling Deng ; Hongyu He ; Ying Zhu ; Xiangyu Zhang ; Mansun Chan
Author_Institution :
SOC Key Lab., Peking Univ. Shenzhen, Beijing, China
Abstract :
In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.
Keywords :
field effect transistors; nanoelectronics; nanowires; drive current; dynamic threshold operation architecture; gate voltage; nanowire tunnel FET; nanowire tunnel field-effect transistor; subthreshold swing; threshold voltage; Logic gates; danymic threshold (DT); nanowire; numerical simulation; tunnel field-effect transistor (TFET);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628211
