DocumentCode :
3478286
Title :
Low phase noise MMIC oscillators in InGaP HBT technology
Author :
Kuylenstierna, Dan ; Zirath, Herbert ; Kozuharov, Rumen ; Bao, Mingquan ; Tsa, TC
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
fYear :
2008
fDate :
16-20 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Low phase noise oscillators in cross-coupled and balanced Colpitts topologies have been designed and implemented in InGaP GaAs technology. A 6.9 GHz cross-coupled oscillator has a measured phase noise of X(100kHz)=-117 dBc/Hz and a 5.5 GHz fixed-frequency balanced Colpitts oscillator has a measured phase noise of X(100kHz)=-120 dBc/Hz. Voltage controlled oscillators (VCOs) have also been designed. For both the cross- coupled and the balanced Colpitts topology, the phase noise of the VCOs is roughly 8 dB higher than that of the fixed-frequency oscillators when the varactor is reverse biased. Beside comparing fixed-frequency oscillator to VCOs, VCOs based on finger varactors are also compared to VCOs based on conventional square varactors. A cross-coupled VCO using finger-varactors has 7 dB lower phase noise and 5 times lower power consumption than a similar cross-coupled VCO based on rectangular varactors.
Keywords :
MMIC oscillators; heterojunction bipolar transistors; voltage-controlled oscillators; Colpitts topologies; HBT technology; cross-coupled oscillator; frequency 6.9 GHz; low phase noise MMIC oscillators; voltage controlled oscillators; Fingers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Noise measurement; Phase measurement; Phase noise; Topology; Varactors; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
Type :
conf
DOI :
10.1109/APMC.2008.4957918
Filename :
4957918
Link To Document :
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