Title :
A novel design of super-capcitor based on black silicon with atomic layer deposition
Author :
Li Zhang ; Danqi Zhao ; Jun He ; Xian Huang ; Fang Yang ; Dacheng Zhang
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Abstract :
In this paper, a novel super-capacitor design based on the black silicon was introduced. The atomic layer deposition was designed to fabricate the dielectric and electrode layer. And the black silicon was chosen for the substrate. A specific MEMS process was also designed to achieve the contact between the metal electrode and electrode layer. The parallel-plate capacitor theory was employed for the capacitance calculation. And the simulation has showed that this novel super-capacitor design has big capacitance and quick charge/discharge speed.
Keywords :
atomic layer deposition; capacitance; dielectric materials; electrodes; elemental semiconductors; micromechanical devices; silicon; supercapacitors; MEMS process; Si; atomic layer deposition; black silicon; capacitance calculation; charge-discharge speed; dielectric layer fabrication; electrode layer fabrication; metal electrode; parallel-plate capacitor theory; supercapcitor design; Capacitors; Carbon; Electrodes; Micromechanical devices; Resists; atomic layer desposition; black silicon; capacitance calculation; specific MEMS process;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628214